Light-emitting device, electronic equipment, and method for producing light-emitting device

ABSTRACT

A light-emitting apparatus includes a first light-emitting device, a second light-emitting device, and a device driving portion having drive transistors. The first light-emitting device includes a first electrode, first light-emitting unit, second electrode, second light-emitting unit, and third electrode. The second light-emitting device includes a third light-emitting unit, fourth electrode, fourth light-emitting unit, and fifth electrode. The light-emitting units are formed in the same step and each have a light-emitting layer that emits a first color light. The second electrode and the fourth electrode are formed in the same step. The light-emitting units are formed in the same step and each have a light-emitting layer that emits a second color light. A first drive transistor is electrically connected to the first electrode while a second drive transistor is electrically connected to the fourth electrode.

TECHNICAL FIELD

The present invention relates to a light-emitting apparatus, electronicequipment, and a method for producing the light-emitting apparatus.

BACKGROUND ART

A liquid crystal display apparatus and the like have been typically usedas a light-emitting apparatus used for a display. In recent years, asanother light-emitting apparatus, an organic electroluminescentlight-emitting apparatus using an organic electroluminescent device(hereinafter, occasionally abbreviated as an “organic EL device”) alsohas been put into practical use. In the organic EL device, alight-emitting unit including a light-emitting layer is provided betweenan anode and a cathode and light emission is provided by exciton energygenerated by recombination of holes and electrons injected to theemitting layer.

A light-emitting apparatus used for a color display is mainlyexemplified by a three-color light-emitting apparatus and a color-filterlight-emitting apparatus.

In the three-color light-emitting apparatus, a color display is obtainedby forming devices capable of respectively emitting light in threeprimary colors of red (R), green (G) and blue (B) and controlling aluminous intensity of each of the three colors. However, the three-colorlight-emitting apparatus requires a high-definition coating using ametal mask when coating, evaporation or the like is performed in orderto form light-emitting layers that emit the respective colors of RGB.

On the other hand, in the color-filter light-emitting apparatus, a whitelight-emitting device and a color filter are used. White light isconverted into three colors of RGB by passing through the color filter.Since the color-filter light-emitting apparatus does not require ahigh-definition coating, the color-filter light-emitting apparatus canbe manufactured more easily than the three-color light-emittingapparatus.

The white light-emitting device exemplarily includes: an anode; acathode; and a single light-emitting unit interposed between the anodeand the cathode, in which two light-emitting layers are laminated toeach other in the light-emitting unit. The two light-emitting layerssimultaneously emit light, thereby providing white light emission as theentire light-emitting unit.

Another arrangement of the white light-emitting device is a so-calledtandem arrangement including an anode, a cathode, a plurality oflight-emitting units interposed between the anode and the cathode, inwhich the light-emitting units are laminated to each other through anintermediate layer (e.g., an intermediate electrode) therebetween.

Patent Literature 1 discloses a display apparatus including the tandemorganic EL device in combination with a color filter.

The organic electroluminescence device included in the display apparatusdisclosed in Patent Literature 1 is provided by a white light-emittingdevice that includes: an anode; a cathode; a first light-emitting unithaving a red light-emitting layer and a green light-emitting layer; asecond light-emitting unit having a blue light-emitting layer; and aconnection layer (intermediate layer) interposed between the first andsecond light-emitting units, the first and second light-emitting unitsand the intermediate layer being provided between the anode and thecathode. In the display apparatus disclosed in Patent Literature 1, thewhite light-emitting devices are disposed to the respective RGB filters.When each of the white light-emitting devices emits white light, thewhite light passes through the color filters to convert the color of thelight.

CITATION LIST Patent Literature

Patent Literature 1: JP-A-2006-324016

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

However, in the display apparatus disclosed in Patent Literature 1,since light emission in each of RGB colors is independently extractedfrom the while light emission, some luminescence components are in vain.For instance, in order to display blue light using the light-emittingdevice, not only a blue light-emitting layer but also a redlight-emitting layer and a green light-emitting layer emits light.Accordingly, power for making the red light-emitting layer and the greenlight-emitting layer to emit light is consumed in vain.

Since reduction in consumption power used for the light-emittingapparatus is desired, an unnecessary power consumption as disclosed inPatent Literature 1 is controversial.

An object of the invention is to provide a light-emitting apparatuscapable of reducing power consumption and a manufacturing method of thelight-emitting apparatus. Another object of the invention is to provideelectronic equipment provided with the light-emitting apparatus.

Means for Solving the Problems

According to an aspect of the invention, a light-emitting apparatusincludes: a first light-emitting device that includes a firstlight-emitting unit, a second light-emitting unit, and a firstintermediate layer interposed between the first light-emitting unit andthe second light-emitting unit, the first light-emitting unit, thesecond light-emitting unit and the first intermediate layer beinglaminated to each other; a second light-emitting device that includes athird light-emitting unit that is formed in the same step as the firstlight-emitting unit, a fourth light-emitting unit that is formed in thesame step as the second light-emitting unit, and a second intermediatelayer that is formed in the same step as the first intermediate layer,the third light-emitting unit, the fourth light-emitting unit and thesecond intermediate layer being laminated to each other; and a devicedriving portion that includes a first drive transistor for driving thefirst light-emitting device and a second drive transistor for drivingthe second light-emitting device, in which the first light-emitting unitand the third light-emitting unit each have a first color light-emittinglayer that emits a first color light, the second light-emitting unit andthe fourth light-emitting unit each have a second color light-emittinglayer that emits a second color light, the first drive transistor drivesthe first light-emitting unit to make the first light-emitting deviceemit the first color light or drives the second light-emitting unit tomake the first light-emitting device emit the second color light, andthe second drive transistor drives the third light-emitting unit or thefourth light-emitting unit to make the second light-emitting device emita color light different from the color light emitted from the firstlight-emitting device.

According to another aspect of the invention, a light-emitting apparatusincludes: a first light-emitting device that includes a firstlight-emitting unit, a second light-emitting unit, and a firstintermediate layer interposed between the first light-emitting unit andthe second light-emitting unit, the first light-emitting unit, thesecond light-emitting unit and the first intermediate layer beinglaminated to each other; a second light-emitting device that includes athird light-emitting unit that is formed in the same step as the firstlight-emitting unit, a fourth light-emitting unit that is formed in thesame step as the second light-emitting unit, and a second intermediatelayer that is formed to have the same arrangement as the firstintermediate layer, the third light-emitting unit, the fourthlight-emitting unit and the second intermediate layer being laminated toeach other; and a device driving portion that includes a first drivetransistor for driving the first light-emitting device and a seconddrive transistor for driving the second light-emitting device, in whichthe first light-emitting unit and the third light-emitting unit eachhave a first color light-emitting layer that emits a first color light,the second light-emitting unit and the fourth light-emitting unit eachhave a second color light-emitting layer that emits a second colorlight, the first drive transistor drives the first light-emitting unitand the second light-emitting unit to make the first light-emittingdevice emit the first color light and the second color light, and thesecond drive transistor drives the third light-emitting unit to make thesecond light-emitting device emit the first color light or drives thefourth light-emitting unit to make the second light-emitting device emitthe second color light.

According to still another aspect of the invention, a light-emittingapparatus includes: a first light-emitting device that includes a firstlight-emitting unit, a second light-emitting unit, and a firstintermediate layer interposed between the first light-emitting unit andthe second light-emitting unit, the first light-emitting unit, thesecond light-emitting unit and the first intermediate layer beinglaminated to each other; a second light-emitting device that includes athird light-emitting unit that is formed to have the same arrangement asthe first light-emitting unit, a fourth light-emitting unit that isformed to have the same arrangement as the second light-emitting unit,and a second intermediate layer that is interposed between the thirdlight-emitting unit and the fourth light-emitting unit and is formed tohave the same arrangement as the first intermediate layer, the thirdlight-emitting unit, the fourth light-emitting unit and the secondintermediate layer being laminated to each other; and a device drivingportion that includes a first drive transistor for driving the firstlight-emitting device and a second drive transistor for driving thesecond light-emitting device, in which the first light-emitting unit andthe third light-emitting unit each have a first color light-emittinglayer that emits a first color light, the second light-emitting unit andthe fourth light-emitting unit each have a second color light-emittinglayer that emits a second color light, the first drive transistor drivesthe first light-emitting unit to make the first light-emitting deviceemit the first color light or drives the second light-emitting unit tomake the first light-emitting device emit the second color light, andthe second drive transistor drives the third light-emitting unit or thefourth light-emitting unit to make the second light-emitting device emita color light different from the color light emitted from the firstlight-emitting device.

It should be noted that “the same arrangement” in the description forthe light-emitting unit and the intermediate layer as described abovemeans a single layer arrangement or a laminated arrangement having thesame film thickness and lamination order as being visually recognizableenough to have been manufactured in the same step. The same applies tothe following.

According to further aspect of the invention, a light-emitting apparatusincludes: a first light-emitting device that includes a firstlight-emitting unit, a second light-emitting unit, and a firstintermediate layer interposed between the first light-emitting unit andthe second light-emitting unit, the first light-emitting unit, thesecond light-emitting unit and the first intermediate layer beinglaminated to each other; a second light-emitting device that includes athird light-emitting unit that is formed to have the same arrangement asthe first light-emitting unit, a fourth light-emitting unit that isformed to have the same arrangement as the second light-emitting unit,and a second intermediate layer that is interposed between the thirdlight-emitting unit and the fourth light-emitting unit and is formed tohave the same arrangement as the first intermediate layer, the thirdlight-emitting unit, the fourth light-emitting unit and the secondintermediate layer being laminated to each other; and a device drivingportion that includes a first drive transistor for driving the firstlight-emitting device and a second drive transistor for driving thesecond light-emitting device, in which the first light-emitting unit andthe third light-emitting unit each have a first color light-emittinglayer that emits a first color light, the second light-emitting unit andthe fourth light-emitting unit each have a second color light-emittinglayer that emits a second color light, the first drive transistor drivesthe first light-emitting unit to make the first light-emitting deviceemit the first color light or drives the second light-emitting unit tomake the first light-emitting device emit the second color light, andthe second drive transistor drives the third light-emitting unit to makethe second light-emitting device emit the first color light or drivesthe fourth light-emitting unit to make the second light-emitting deviceemit the second color light.

According to still further aspect of the invention, a light-emittingapparatus includes: a first light-emitting device; a secondlight-emitting device; and a device driving portion that includes afirst drive transistor for driving the first light-emitting device and asecond drive transistor for driving the second light-emitting device, inwhich the first light-emitting device includes a first electrode, afirst light-emitting unit, a second electrode, a second light-emittingunit, and a third electrode in this order, the second light-emittingdevice includes a third light-emitting unit, a fourth electrode, afourth light-emitting unit, and a fifth electrode in this order, thefirst light-emitting unit and the third light-emitting unit are formedin the same step and each have a first color light-emitting layer thatemits a first color light, the second electrode and the fourth electrodeare formed in the same step, the second light-emitting unit and thefourth light-emitting unit are formed in the same step and each have asecond color light-emitting layer that emits a second color light, thefirst drive transistor is electrically connected to the first electrode,and the second drive transistor is electrically connected to the fourthelectrode.

According to still further aspect of the invention, a light-emittingapparatus includes: a first light-emitting device; a secondlight-emitting device; and a device driving portion that includes afirst drive transistor for driving the first light-emitting device and asecond drive transistor for driving the second light-emitting device, inwhich the first light-emitting device includes a first electrode, afirst light-emitting unit, a second electrode, a second light-emittingunit, and a third electrode in this order, the second light-emittingdevice includes an eighth electrode, a fourth electrode, a fourthlight-emitting unit, and a fifth electrode in this order, the secondelectrode and the fourth electrode are formed in the same step, thefirst light-emitting unit has a first color light-emitting layer thatemits a first color light, the second light-emitting unit and the fourthlight-emitting unit are formed in the same step and each have a secondcolor light-emitting layer that emits a second color light, the firstdrive transistor is electrically connected to the first electrode, andthe second drive transistor is electrically connected to the eighthelectrode.

According to still further aspect of the invention, a light-emittingapparatus includes: a first light-emitting device; a secondlight-emitting device; a third light-emitting device; and a devicedriving portion that includes a first drive transistor for driving thefirst light-emitting device, a second drive transistor for driving thesecond light-emitting device, and a third drive transistor for drivingthe third light-emitting device, in which the first light-emittingdevice includes: a first electrode, a first light-emitting unit, asecond electrode, a second light-emitting unit, and a third electrode inthis order, the second light-emitting device includes a thirdlight-emitting unit, a fourth electrode, a fourth light-emitting unit,and a fifth electrode in this order, the third light-emitting deviceincludes a fifth light-emitting unit, a sixth electrode, a sixthlight-emitting unit, and a seventh electrode in this order, the firstlight-emitting unit, the third light-emitting unit and the fifthlight-emitting unit are formed in the same step and each have a firstcolor light-emitting layer that emits a first color light, the secondelectrode, the fourth electrode and the seventh electrode are formed inthe same step, the second light-emitting unit, the fourth light-emittingunit and the sixth light-emitting unit are formed in the same step andeach have a second color light-emitting layer that emits a second colorlight, the first drive transistor is electrically connected to the firstelectrode, the second drive transistor is electrically connected to thefourth electrode, and the third drive transistor is electricallyconnected to the sixth electrode.

According to still further aspect of the invention, a light-emittingapparatus includes: a first light-emitting device; a secondlight-emitting device; a device driving portion that includes a firstdrive transistor for driving the first light-emitting device and asecond drive transistor for driving the second light-emitting device, inwhich the first light-emitting device and the second light-emittingdevice each have an intermediate electrode, the intermediate electrodeis electrically divided by an insulating portion between the firstlight-emitting device and the second light-emitting device into a secondelectrode and a fourth electrode, the first light-emitting deviceincludes a first electrode, a first light-emitting unit, a secondelectrode, a second light-emitting unit, and a third electrode in thisorder, the second light-emitting device includes a third light-emittingunit, a fourth electrode, a fourth light-emitting unit, and a fifthelectrode in this order, the first light-emitting unit and the thirdlight-emitting unit each have a first color light-emitting layer thatemits a first color light, the second light-emitting unit and the fourthlight-emitting unit each have a second color light-emitting layer thatemits a second color light, the first drive transistor is electricallyconnected to the second electrode, and the second drive transistor iselectrically connected to the fourth electrode.

According to still further aspect of the invention, a light-emittingapparatus includes: a first light-emitting device; a secondlight-emitting device; and a device driving portion that includes afirst drive transistor for driving the first light-emitting device and asecond drive transistor for driving the second light-emitting device, inwhich the first light-emitting device includes a first electrode, afirst light-emitting unit, a second electrode, a second light-emittingunit, and a third electrode in this order, the second light-emittingdevice includes a third light-emitting unit, a fourth electrode, afourth light-emitting unit, and a fifth electrode in this order, thefirst light-emitting unit and the third light-emitting unit are formedin the same step and each have a first color light-emitting layer thatemits a first color light, the second electrode and the fourth electrodeare formed in the same step, the second light-emitting unit and thefourth light-emitting unit are formed in the same step and each have asecond color light-emitting layer that emits a second color light, thefirst drive transistor is electrically connected to the first electrode,and the second drive transistor is electrically connected to the fourthelectrode to avoid a potential difference between ends in a thicknessdirection of the third light-emitting unit.

According to still further aspect of the invention, a method ofmanufacturing a light-emitting apparatus, which includes a substrate, afirst light-emitting device provided on the substrate, a secondlight-emitting device provided in a region of the substrate differentfrom a region of the substrate where the first light-emitting device isprovided, includes: forming on the substrate a first drive transistorfor driving the first light-emitting device and a second drivetransistor for driving the second light-emitting device; forming a firstelectrode in a first region of the substrate where the firstlight-emitting device is formed to electrically connect the firstelectrode to the first drive transistor; forming an insulating portion,which is raised from the substrate and having a protrusion thatprotrudes toward a second region where the second light-emitting deviceis formed, at a position for dividing the first region and the secondregion; forming a first color light-emitting unit comprising a firstcolor light-emitting layer that emits a first color light, across theinsulating portion over the first and second regions; forming anintermediate electrode across the insulating portion over the firstregion and the second region to electrically connect the intermediateelectrode in the second region to the second drive transistor; andforming a second color light-emitting unit comprising a second colorlight-emitting layer that emits a second color light, across theinsulating portion over the first and second regions.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a plan view showing a light-emitting apparatus according to afirst exemplary embodiment.

FIG. 2 is a schematic cross-sectional view in a substrate thicknessdirection showing the light-emitting apparatus according to the firstexemplary embodiment.

FIG. 3 is another schematic cross-sectional view in the substratethickness direction showing the light-emitting apparatus according tothe first exemplary embodiment.

FIG. 4 is still another schematic cross-sectional view in the substratethickness direction showing the light-emitting apparatus according tothe first exemplary embodiment.

FIG. 5 is a schematic view of a device driving circuit for driving alight-emitting device of the light-emitting apparatus according to thefirst exemplary embodiment.

FIG. 6 is a schematic view showing a laminated arrangement of thelight-emitting device according to the first exemplary embodiment.

FIG. 7 is a schematic view showing a step of forming an electrode on asubstrate on which a device driving portion is formed.

FIG. 8 is a schematic view showing a step of coating aphotosensitive-resin-containing ink to form an insulating film.

FIG. 9 is a schematic view showing a step of patterning the insulatingfilm at a predetermined position to form an insulating portion.

FIG. 10 is a schematic view showing a step of forming a firstlight-emitting unit and a third light-emitting unit.

FIG. 11 is a schematic view showing a step of forming a second electrodeand a fourth electrode.

FIG. 12 is a schematic view showing a step of forming a secondlight-emitting unit and a fourth light-emitting unit.

FIG. 13 is a schematic cross-sectional view in a substrate thicknessdirection showing a light-emitting apparatus according to a secondexemplary embodiment.

FIG. 14 is a schematic view showing a laminated arrangement of alight-emitting device of the light-emitting apparatus according to thesecond exemplary embodiment.

FIG. 15 is a schematic cross-sectional view in a substrate thicknessdirection showing a light-emitting apparatus according to a thirdexemplary embodiment.

FIG. 16 is a schematic cross-sectional view in a substrate thicknessdirection showing a light-emitting apparatus according to a fourthexemplary embodiment.

FIG. 17 is a plan view showing a light-emitting apparatus according to afifth exemplary embodiment.

FIG. 18 is a schematic cross-sectional view in a substrate thicknessdirection showing the light-emitting apparatus according to the fifthexemplary embodiment.

FIG. 19 is another schematic cross-sectional view in the substratethickness direction showing the light-emitting apparatus according tothe fifth exemplary embodiment.

DESCRIPTION OF EMBODIMENTS First Exemplary Embodiment

A first exemplary embodiment of the invention will be described withreference to the drawings.

Light-Emitting Apparatus

FIG. 1 is a plan view showing a part of a light-emitting apparatus 1according to the first exemplary embodiment.

The light-emitting apparatus 1 includes a first light-emitting device 10and a second light-emitting device 20.

In the first exemplary embodiment described below, the firstlight-emitting device 10 and the second light-emitting device 20 aredescribed with reference to an example in which an organicelectroluminescence device (hereinafter, occasionally abbreviated as anorganic EL device) is used as an organic light-emitting device. Itshould be noted that the invention is not limited to the light-emittingapparatus using the organic EL device as the light-emitting device.

In the light-emitting apparatus 1, a pixel 1P (a display unit) isdefined including the first light-emitting device 10 and the secondlight-emitting device 2. The light-emitting apparatus 1 includes aplurality of pixels 1P. The plurality of pixels 1P are arranged in amatrix as a whole to form a light-emitting region. For instance, asshown in FIG. 1, the first light-emitting devices 10 are substantiallyequidistant to each other in a longitudinal direction and the secondlight-emitting devices 20 are substantially equidistant to each other inthe longitudinal direction. Moreover, as shown in FIG. 1, each of thefirst light-emitting devices 10 and each of the second light-emittingdevices 20 are alternately provided in a traverse direction. Aninsulating portion 60 for partitioning and electrically insulating thefirst light-emitting device 10 from the second light-emitting device 20is formed between the first light-emitting device 10 and the secondlight-emitting device 20.

FIG. 2 is a schematic cross-sectional view in a substrate thicknessdirection showing the light-emitting apparatus 1 according to the firstexemplary embodiment and shows a cross-sectional view taken along II-II′line of FIG. 1 in a direction of arrows.

In the light-emitting apparatus 1, the first light-emitting device 10and the second light-emitting device 20 are provided on a substrate 100.It should be noted that, in the description of the exemplaryembodiments, a description in relation to a top and a bottom (or up anddown) refers to an arrangement in which the substrate 100 is positionedat the bottom and the light-emitting devices 10 and 20 are positioned atthe top.

Substrate

The substrate 100 is a flat plate member for supporting the firstlight-emitting device 10 and the second light-emitting device 20. Thelight-emitting apparatus 1 is a so-called bottom emission device inwhich irradiation light from the first light-emitting device 10 and thesecond light-emitting device 20 is extracted through the substrate 100.Accordingly, the substrate 100 is preferably a light-transmissive platethat transmits 50% or more of light in a visible region of 400 nm to 700nm. The substrate 100 is exemplarily a glass plate, a polymer plate orthe like. Specifically, examples of the glass plate include soda-limeglass, barium/strontium-containing glass, lead glass, aluminosilicateglass, borosilicate glass, barium borosilicate glass, and quartz. Forthe polymer plate, materials such as polycarbonate resins, acryl resins,polyethylene terephthalate resins, polyether sulfide resins, polysulfoneresins, and triazine resin can be used. The substrate 100 is not limitedto a plate member but may be a film.

First Light-Emitting Device

As shown in FIG. 2, the first light-emitting device 10 is provided in afirst region of the substrate 100 and includes a first electrode 12,first light-emitting unit 13, second electrode 14, second light-emittingunit 15, and third electrode 16. In the first exemplary embodiment, thefirst electrode 12, first light-emitting unit 13, second electrode 14,second light-emitting unit 15, and third electrode 16 are provided inthis order from the substrate 100.

Since the second electrode 14 (intermediate electrode) included in anintermediate layer is interposed between the first light-emitting unit13 and the second light-emitting unit 15 in the first light-emittingdevice 10, the first light-emitting device 10 has a so-called tandemdevice arrangement. The intermediate layer is provided between thelight-emitting units. In an arrangement in which a plurality oflight-emitting units are provided between a pair of electrodes and theintermediate layer is provided between the plurality of light-emittingunits, specifically, in such a tandem device arrangement as that of thefirst light-emitting device 10, the intermediate layer has a function toinject electrons to the light-emitting unit near the anode and afunction to inject holes to the light-emitting unit near the cathode.The intermediate layer has a laminated arrangement including onesselected from a donor-containing layer, electro-conductive layer(intermediate electrode) and acceptor-containing layer. The intermediatelayer preferably has a laminated arrangement of the donor-containinglayer, electro-conductive layer (intermediate electrode) andacceptor-containing layer. The intermediate layer is also preferablyprovided only by the acceptor-containing layer. The intermediate layerof the first light-emitting device 10 is a first intermediate layer.

The first intermediate layer is a supply source of electrons or holes tobe injected into each of the light-emitting units. In addition to chargeinjected from the pair of electrodes, charge supplied from theintermediate layer is injected into the light-emitting unit.Accordingly, by providing the intermediate layer, luminous efficiency(current efficiency) relative to applied current is improved. Anelectric conductivity of the intermediate layer is preferably in a rangeof 10⁻² S/cm to 10⁶ S/cm.

Examples of a material for forming the electric conductive layer includea metal, metal oxide, mixture of metal oxides, metal composite oxide,chalcogenide material and organic semiconductor material. Examples ofthe metal are preferably Mg, Al, and a film formed by co-evaporating Mgand Ag. Examples of the metal oxide include ZnO, WO₃, MoO₃ and MoO₂.Examples of the mixture of the metal oxides include ITO and IZO(registered trade mark). The acceptor-containing layer contains anelectron-accepting material. Examples of the electron-accepting materialinclude the metal oxide, the metal composite oxide and anelectron-accepting organic compound. Examples of the electron-acceptingorganic compound include an organic compound having a CN (cyano) groupas a substituent. The organic compound having a CN group is preferably atriphenylene derivative, tetracyanoquinodimethane derivative andindenofluorene derivative. The triphenylene derivative is preferablyhexacyanohexaazatriphenylene. The tetracyanoquinodimethane derivative ispreferably tetrafluoroquinodimethane and dicyanoquinodimethane. Theindenofluorene derivative is preferably a compound disclosed inInternational Publication WO2009/011327, WO2009/069717, orWO2010/064655. The acceptor-containing layer may be provided only by theelectron-accepting substance or may be provided in a mixture with otherorganic compounds.

The donor-containing layer contains an electron-donating material and ispreferably a mixed layer of an electron transporting material and adonor represented by an alkali metal. As the electron-donating material,at least one selected from the group consisting of a donor metal, donormetal compound and donor metal complex can be used.

Examples of the compounds used for the donor metal, donor metal compoundand donor metal complex are compounds disclosed in Patent ApplicationNumber PCT/JP2010/003434.

Examples of the chalcogenide material include ZnS, ZnSe, CdS, CdTe, MgS,MgSe, ZnSSe, ZnMgSSe, ZnCdSSe, and ZnTeSe.

Examples of the organic semiconductor material include an amorphouscarbon, diamond-like carbon, conductive conjugated polymer,oxidizer-added polymer, reduction-causing-agent-added polymer,oxidizer-added low molecular compound and reduction-causing-agent-addedlow molecular compound.

Examples of the conductive oxides include NbOx, LaOx, NdOx, SmOx, EuOx,MoOx, ReOx, WOx, OsOx, IrOx, and PtOx (x=0.2 to 5).

Light-Emitting Unit

The first light-emitting unit 13 includes a first color light-emittinglayer that emits a first color light. The second light-emitting unit 15includes a second color light-emitting layer that emits a second colorlight. In the first exemplary embodiment, the first color light is blueand the second color light is yellow. It should be noted that theinvention is not particularly limited to the examples of the first andsecond color lights described in the exemplary embodiments.

Each of the first light-emitting unit 13 and the second light-emittingunit 15 may be provided by a single light-emitting layer, oralternatively, may further include layers used in a known organic ELdevice such as a hole injecting layer, a hole transporting layer, anelectron injecting layer, an electron transporting layer, a holeblocking layer, and an electron blocking layer. Each of the firstlight-emitting unit 13 and the second light-emitting unit 15 mayindependently include an inorganic compound. In the first exemplaryembodiment, the first light-emitting unit 13 and the secondlight-emitting unit 15 form a planar light-emitting region.

Since each of the layers of the first light-emitting unit 13 has thesame arrangement as each of the layers of a third light-emitting unit 23of the second light-emitting device 20, the layers of the firstlight-emitting unit 13 are formed in the same step substantially overthe entire light-emitting region of the light-emitting apparatus 1,whereby high-definition coating using a metal mask and the like becomesunnecessary. Moreover, since each of the layers of the secondlight-emitting unit 15 has the same arrangement as each of the layers ofthe fourth light-emitting unit 25 of the second light-emitting device20, the layers of the second light-emitting unit 15 also can be formedin the same step substantially over the entire light-emitting region ofthe light-emitting apparatus 1.

Light-Emitting Layer

The light-emitting layer of each of the light-emitting units, which isformed of emitting materials such as Alq₃(tris(8-hydroxyquinolinato)aluminium), provides a single-color emissionsuch as red, green, blue or yellow emission, or combined-color emissionof red, green, blue and yellow emission. The light-emitting units eachmay be formed of a fluorescent material or a phosphorescent material.When the light-emitting units are provided in a combination of thefluorescent material and the phosphorescent material, the light-emittingunits may be provided in a sequence of fluorescent emittingunit/phosphorescent emitting unit or phosphorescent emittingunit/fluorescent emitting unit.

In the first exemplary embodiment, the first color light is blue and thefirst color light-emitting layer of the first light-emitting unit 13 isa fluorescent emitting layer. The second color light is yellow and thesecond color light-emitting layer of the second light-emitting unit 15is a phosphorescent emitting layer. It should be noted that theinvention is not particularly limited to the examples of types of thelight-emitting layer described in the exemplary embodiments.

Moreover, a doping system is generally used in the light-emitting layer.In this case, the light-emitting layer is an organic layer containing ahost material and a dopant material. The host material generallypromotes recombination of electrons and holes and transmits excitonenergy generated by the recombination to the dopant material. The dopantmaterial is preferably a compound having a high quantum efficiency. Thedopant material receiving the exciton energy from the host materialexhibits a high emitting performance.

Dopant Material

The dopant material is formed of dopant materials used for the organicEL device and selected from a dopant material generating fluorescentemission and a dopant material generating phosphorescent emission. Thedopant material generating fluorescent emission is selected from afluoranthene derivative, pyrene derivative, aryl acethylene derivative,fluorene derivative, boron complex, perylene derivative, oxadiazolederivative and anthracene derivative. The fluoranthene derivative,pyrene derivative and boron complex are preferable among the above. Sucha material generating fluorescent emission is occasionally referred toas a fluorescent dopant material.

The dopant material generating phosphorescent emission preferablycontains a metal complex. The metal complex preferably contains: a metalatom selected from iridium (Ir), platinum (Pt), osmium (Os), gold (Au),rhenium (Re) and ruthenium (Ru); and a ligand. Particularly, the ligandand the metal atom preferably form an ortho-metal bond. Such a dopantmaterial generating phosphorescent emission is occasionally referred toas a phosphorescent dopant material.

The phosphorescent dopant material is preferably a compound containing ametal selected from iridium (Ir), osmium (Os) and platinum (Pt) becausesuch a compound, which exhibits high phosphorescence quantum yield, canfurther enhance external quantum efficiency of the emitting device. Thephosphorescent emitting material is more preferably a metal complex suchas an iridium complex, osmium complex or platinum complex, among whichan iridium complex and platinum complex are more preferable and orthometalation of an iridium complex is the most preferable. In terms of theluminous efficiency, an organic metal complex including the ligandselected from phenyl quinoline, phenyl isoquinoline, phenyl pyridine,phenyl pyrimidine, phenyl pyrazine and phenyl imidazole is preferable.

One of the dopant material may be used alone, or two or more thereof maybe used in combination.

Host Material

The host material, which is formed of a host material used for theorganic EL device, is exemplified by an amine derivative, azinederivative and fused polycyclic aromatic derivative.

Examples of the amine derivative are a monoamine compound, diaminecompound, triamine compound, tetramine compound and amine compoundsubstituted by a carbazole group.

Examples of the azine derivative are a monoazine derivative, diazinederivative and triazine derivative.

The fused polycyclic aromatic derivative is preferably a fusedpolycyclic aromatic hydrocarbon having no heterocyclic skeleton.Examples of the fused polycyclic aromatic derivative are the fusedpolycyclic aromatic hydrocarbon such as naphthalene, anthracene,phenanthrene, chrysene, fluoranthene and triphenylene, or derivativesthereof

Specific examples of the host material in the emitting layer containingthe phosphorescent dopant include a carbazole derivative, triazolederivative, oxazole derivative, oxadiazole derivative, imidazolederivative, polyarylalkane derivative, pyrazoline derivative, pyrazolonederivative, phenylenediamine derivative, arylamine derivative,amino-substituted chalcone derivative, styryl anthracene derivative,fluorenone derivative, hydrazone derivative, stilbene derivative,silazane derivative, aromatic tertiary amine compound, styrylaminecompound, aromatic dimethylidene compound, porphyrin compound,anthraquinodimethane derivative, anthrone derivative, diphenylquinonederivative, thiopyrandioxide derivative, carbodiimide derivative,fluorenylidenemethane derivative, distyryl pyrazine derivative,hyterocyclic tetracarboxylic acid anhydride such as naphthaleneperylene,phthalocyanine derivative, various metal complex, polysilane compounds,poly(N-vinylcarbazole) derivative, aniline copolymer, conductivehigh-molecular weight oligomers and high-molecular weight compounds.Examples of the various metal complexes include a metal complex of8-quinolynol derivative and a metal complex including metalphthalocyanine, benzoxazole and benzothiazole as a ligand. Examples ofthe conductive high-molecular weight oligomer include a thiopheneoligomer and polythiophene. Examples of the high-molecular weightcompound herein include a polythiophene derivative, polyphenylenederivative, polyphenylenevinylene derivative and polyfluorenederivative.

One of the host materials may be used alone, or two or more thereof maybe used in combination.

The respective light-emitting layers of the first light-emitting unit 13and the second light-emitting unit 15 may contain a dopant material ofthe same emission type. Specifically, when the light-emitting layer ofthe first light-emitting unit 13 contains a fluorescent dopant material,the light-emitting layer of the second light-emitting unit 15 also maycontain a fluorescent dopant material. When the light-emitting layer ofthe first light-emitting unit 13 contains a phosphorescent dopantmaterial, the light-emitting layer of the second light-emitting unit 15also may contain a phosphorescent dopant material.

When the respective light-emitting layers of the first light-emittingunit 13 and the second light-emitting unit 15 contain a plurality oflight-emitting layers, the plurality of light-emitting layers also maycontain dopant materials of different emission type. Specifically, oneof the light-emitting layers may contain the fluorescent dopant materialwhile the other of the emitting layers may contain the phosphorescentdopant material.

The combinations of the emission types of the dopant materials alsoapply to a case where three or more light-emitting units are laminated.

In addition to the above exemplary compounds, any compound selected fromcompounds used in a typical organic El device is usable as a compoundfor the respective light-emitting layers of the first light-emittingunit 13 and the second light-emitting unit 15 as well as other layers.

First Electrode and Third Electrode

In the first exemplary embodiment, the first electrode 12 is the anodeand the third electrode 16 is the cathode.

The anode of the organic EL device is used for injecting holes into thehole injecting layer, the hole transporting layer or the emitting layer.It is effective that the anode has a work function of 4.5 eV or more.

Specific examples of a material for the anode are alloys of indium-tinoxide (ITO), tin oxide (NESA), indium zinc oxide, gold, silver, platinumand copper.

The anode is manufactured by forming a thin film of the electrodesubstance by vapor deposition, sputtering or the like. In the firstexemplary embodiment, the first electrode 12 (the anode) is selectivelyformed in the first region in which the first light-emitting device 10is formed.

When light from the emitting layer is to be extracted through the anode(first electrode 12), the anode preferably transmits more than 10% ofthe light in the visible region. Sheet resistance of the anode ispreferably several hundreds Ω/ square or less. The thickness of theanode is typically in a range of 10 nm to 1 μm, and preferably in arange of 10 nm to 200 nm, though it depends on the material of theanode.

The cathode is preferably formed of a material with smaller workfunction in order to inject electrons into the electron injecting layer,the electron transporting layer and the emitting layer.

Although a material for the cathode is not particularly limited,examples of the material are indium, aluminium, magnesium, alloy ofmagnesium and indium, alloy of magnesium and aluminium, alloy ofaluminium and lithium, alloy of aluminium, scandium and lithium, andalloy of magnesium and silver.

Similar to the anode, the cathode may be manufactured by forming a thinfilm on the electron transporting layer or the electron injecting layerthrough a method such as vapor deposition and sputtering. In the firstexemplary embodiment, the third electrode 16 is a common electrodeformed of the same material as the fifth electrode 26 of the secondlight-emitting device 20 in the same step substantially over the wholelight-emitting region of the light-emitting apparatus 1.

In addition, light from the light-emitting layer may be extractedthrough the cathode (third electrode 16). When light from the emittinglayer is to be emitted through the cathode, the cathode preferablytransmits more than 10% of the light in the visible region.

Sheet resistance of the cathode is preferably several hundreds Q persquare or less.

The film thickness of the cathode is typically in a range of 10 nm to 1μm, and preferably in a range of 50 nm to 200 nm, though it depends onthe material of the cathode.

It should be noted that the invention is not limited to the firstexemplary embodiment but the third electrode 16 may be the anode and thefirst electrode 12 may be the cathode depending on a driving method ofthe light-emitting apparatus 1.

Second Light-Emitting Device

As shown in FIG. 2, the second light-emitting device 20 is provided in asecond region different from the first region on the substrate 100 andis adjacent to the first light-emitting device 10. The secondlight-emitting device 20 includes the third light-emitting unit 23,fourth electrode 24, fourth light-emitting unit 25 and fifth electrode26. In the first exemplary embodiment, the third light-emitting unit 23,fourth electrode 24, fourth light-emitting unit 25 and fifth electrode26 are provided in this order from the substrate 100.

Similar to the first light-emitting device 10, the second light-emittingdevice 20 also has a device arrangement in which the fourth electrode 24(intermediate electrode) is interposed between the third light-emittingunit 23 and the fourth light-emitting unit 25. The intermediate layer isprovided between the light-emitting units as described above. In thesecond light-emitting device 20, the third light-emitting unit 23 andthe fourth light-emitting unit 25 are not provided between a pair ofelectrodes. Accordingly, the fourth electrode 24 is an intermediatelayer (second intermediate layer) in the second light-emitting device 20and simultaneously corresponds to the anode in the second light-emittingdevice 20. The fourth electrode 24 is electrically connected to a devicedriving portion and simultaneously functions as an electrode to supplycarriers (holes) to the fourth light-emitting unit. Accordingly, thefourth electrode 24 includes a charge generating layer or a conductivelayer. The conductive layer contains a conductive material orsemiconductive material. Since the fourth electrode 24 of the secondlight-emitting device 20 has the same arrangement as the secondelectrode 14 of the first light-emitting device, the first and secondintermediate layers are formed in the same step substantially over thewhole light-emitting region of the light-emitting apparatus 1, wherebyhigh-definition coating using a metal mask and the like becomesunnecessary.

As described above, the fifth electrode 26 is a common electrode withthe third electrode 16 of the first light-emitting device 10 and isformed in the same step substantially over the whole light-emittingregion of the light-emitting apparatus 1.

Light-Emitting Unit

The third light-emitting unit 23 includes the first color light-emittinglayer that is capable of emitting the same first color light as that ofthe first light-emitting unit 13. The fourth light-emitting unit 25includes the second color light-emitting layer that emits the samesecond color light as that of the second light-emitting unit 15. In thefirst exemplary embodiment, the third light-emitting unit 23 and thefourth light-emitting unit 25 form a planar light-emitting region.

In the first exemplary embodiment, since the third light-emitting unit23 is not held between the electrodes as shown in FIG. 2, there is nopotential difference between both ends in a thickness direction of thethird light-emitting unit 23 when the light-emitting apparatus 1 isdriven, so that the third light-emitting unit 23 doest not emit. On theother hand, the fourth light-emitting unit 25 held between the fourthelectrode 24 and the fifth electrode 26 emits the second color light.

It should be noted that, since the respective arrangements of the thirdlight-emitting unit 23 and the fourth light-emitting unit 25 other thanthe above are the same as that in the first light-emitting device, thedescription is omitted.

FIG. 3 is a schematic cross-sectional view in the substrate thicknessdirection showing the light-emitting apparatus 1 and shows a crosssectional view taken along III-III′ line of FIG. 1 in a direction ofarrows.

As shown in FIG. 3, the insulating portion 60 is provided between theregion where the first light-emitting device 10 is provided and theregion where the second light-emitting device 20 is provided. Moreover,as shown in FIG. 1, the insulating portion 60 is provided between theregion where the first light-emitting device 10 is provided and theregion where the second light-emitting device 20 is provided in thelongitudinal direction, so that the regions are divided. As shown inFIG. 3, the raised insulating portion 60 forms a step. This stepdisconnects the layers of the first light-emitting device 10 from thelayers of the second light-emitting device 20, so that the secondelectrode 14 of the first light-emitting device 10 is not electricallyconnected with the fourth electrode 24 of the second light-emittingdevice 20.

FIG. 4 is a schematic cross-sectional view in the substrate thicknessdirection showing the light-emitting apparatus 1 and shows a crosssectional view taken along IV-IV′ line of FIG. 1 in a direction ofarrows.

As shown in FIG. 4, the layers of the first light-emitting device 10 arecontinuous to those of the adjacent first light-emitting device 10, sothat the second electrode 14 is not divided.

Device Driving Portion

FIG. 5 shows a device driving circuit 50 as the device driving portion.

The light-emitting apparatus 1 includes the device driving circuit 50for driving the first light-emitting device 10 and the secondlight-emitting device 20. The device driving circuit 50, which is aso-called active driving circuit, is supported on the substrate 100 andincludes a drive transistor 51, switching transistor 52 and capacitordevice 53. The drive transistor 51 for driving the first light-emittingdevice 10 is a first drive transistor 51A. The drive transistor 51 fordriving the second light-emitting device 20 is a second drive transistor51B.

On the substrate 100, a scanning electrode wire 54 is provided in onedirection and a signal electrode wire 55 and a common power wire 56 areprovided intersecting with the scanning electrode wire 54. At a portionwhere the scanning electrode wire 54 intersects with the signalelectrode wire 55 and a portion where the scanning electrode wire 54intersects with the common power wire 56, an interlayer insulating filmor the like is formed of an insulative material to avoid electricalconnection.

The drive transistor 51 and the switching transistor 52 are provided bya typical thin film transistor (TFT). An arrangement of the TFT may be,for instance, an inverse-staggered arrangement (so-called bottom gatetype) or a staggered arrangement (top gate type).

The dive transistor 51 includes a drive semiconductor layer 510, drivegate electrode 511, drive source electrode 512 and drive drain electrode513 (see FIG. 2).

The switching transistor 52 includes a switching semiconductor layer,switching gate electrode, switching source electrode and switching drainelectrode (which are not shown).

The capacitor device 53 includes a first capacitor plate and a secondcapacitor plate which are disposed opposing each other through theinterlayer insulating film as a derivative. In the capacitor device 53,a capacitor volume is determined according to stored charges and avoltage between the first and second capacitor plates.

The switching transistor 52 is used as a switching device that selects atarget light-emitting device for emission. The switching gate electrodeis connected to the scanning electrode wire 54. The switching sourceelectrode is connected to the signal electrode wire 55. The switchingdrain electrode is spaced from the switching source electrode and isconnected to the first capacitor plate of the capacitor device 53.

The drive transistor 51 applies to the light-emitting devices 10 and 20a driving voltage for making the light-emitting devices 10 and 20 withinselected pixel(s) emit light. The drive gate electrode 511 of the drivetransistor 51 is connected to the first capacitor plate of the capacitordevice 53. The drive source electrode 512 and the second capacitor plateof the capacitor device 53 are connected to the common power wire 56.The drive drain electrode 513 is electrically connected to the firstelectrode 12 of the first light-emitting device 10 or the fourthelectrode 24 of the second light-emitting device 20 through an electrodeprovided to a connection hole 591 penetrating in a thickness directionof a flattening film 59 (see FIG. 2).

The switching transistor 52 is activated by a gate voltage applied tothe scanning electrode wire 54 to transmit a data voltage applied to thesignal electrode wire 55 to the drive transistor 51. A voltageequivalent to a difference between the common voltage applied to drivetransistor 51 by the common power wire 56 and the data voltagetransmitted from the switching transistor 52 is stored in the capacitordevice 53. Electric current for the voltage stored in the capacitordevice 53 flows to the first light-emitting device 10 and the secondlight-emitting device 20 through the drive transistor 51.

The drive semiconductor layer 510 is formed on the substrate 100 (seeFIG. 2). The drive semiconductor layer 510 is formed of a polysiliconfilm in the first exemplary embodiment. It should be noted that thematerial of the drive semiconductor layer is not limited to the examplesdescribed in the exemplary embodiment, but may be exemplified byamorphous silicon and continuous grain boundary silicon.

The drive semiconductor layer 510 includes a channel region 514 notdoped with impurities, a source region 515 and a drain region 516 whichare doped with impurities and respectively provided on lateral sides ofthe channel region 514.

In the first exemplary embodiment, a doping substance is P-typeimpurities such as boron. The doping impurities are changed as neededdepending on types of the thin film transistor.

Although the PMOS-structured thin film transistor using the P-typeimpurities is used as the drive transistor 51 in the first exemplaryembodiment, it is not necessary to use the PMOS-structured thin filmtransistor. An NMOS- or CMOS-structured thin film transistor usingN-type impurities may alternatively be used as the drive transistor 51.

A gate insulating film 57 is formed on the drive semiconductor layer 510(see FIG. 2). The gate insulating film 57 is formed of silicon nitride(SiNx), silicon oxide (SiOx) or the like. Gate wires including the drivegate electrode 511 are formed on the gate insulating film 57. The gatewires further includes the scanning electrode wire 54, the firstcapacitor plate of the capacitor device 53, and other wires. The drivegate electrode 511 is formed in a manner to overlap with at least a partof the drive semiconductor layer 510, particularly with the channelregion 514.

The interlayer insulating film 58 covering the drive gate electrode 511is formed on the gate insulating film 57 (see FIG. 2). The gateinsulating film 57 and the interlayer insulating film 58 have aplurality of through holes from which the source region 515 and thedrain region 516 of the drive semiconductor layer 510 are exposed.Similar to the gate insulating film 57, the interlayer insulating film58 is formed of silicon nitride (SiNx), silicon oxide (SiOx) or thelike.

Data wires including the drive source electrode 512 and the drive drainelectrode 513 are formed on the interlayer insulating film 58. The datawires further include the signal electrode wire 55, common power wire56, second capacitor plate of the capacitor device 53, and other wires.The drive source electrode 512 and the drive drain electrode 513 arerespectively connected to the source region 515 and the drain region 516of the drive semiconductor layer 510 through the through holes formed inthe interlayer insulating film 58 and the gate insulating film 57.

The drive transistor 51 are thus formed including the drivesemiconductor layer 510, drive gate electrode 511, drive sourceelectrode 512 and drive drain electrode 513. The arrangement of thedrive transistor 51 is not particularly limited to the above example.

The flattening film 59 is formed on the interlayer insulating film 58 tocover the data wires (see FIG. 2). The flattening film 59 flattens theregions on which the light-emitting devices 10 and 20 are formed.Moreover, the connection hole 591 from which a part of the drive drainelectrode 513 is exposed is formed on the flattening film 59. Anelectrode (the first electrode 12 or a relay electrode 22) is providedin the connection hole 591 and connected to the part of the drive drainelectrode 513 on an upper surface of the interlayer insulating film 58.

The flattening film 59 is formed of at least one material selected froman acrylic resin (polyacrylates resin), epoxy resin, phenolic resin,polyamide resin, unsaturated polyester resin, polyphenylene resin(polyphenylen ether resin), polyphenylene sulfide resin, andbenzocyclobutene (BCB).

Connection between Light-Emitting Device and Device Driving Circuit

As shown in FIG. 2, the first electrode 12 is formed substantially overthe entire surface of the first region in which the first light-emittingdevice 10 is formed on the flattening film 59.

No film for forming an electrode is formed on the second region in whichthe second light-emitting device 20 is formed on the flattening film 59.The relay electrode 22 is selectively formed between the first andsecond regions on the flattening film 59 as shown in FIG. 2. The relayelectrode 22 connects the fourth electrode 24 of the secondlight-emitting device 20 to the drive drain electrode 513 of the drivetransistor 51. An auxiliary connector 221 is formed on the relayelectrode 22 so as to facilitate the connection between the fourthelectrode 24 and the relay electrode 22. The first electrode 12 and therelay electrode 22 are formed of the same material in the same step. Theauxiliary connector 221 is separately formed of a conductive materialafter the relay electrode 22 is formed.

The first electrode 12 and the relay electrode 22 are connected to thedrive drain electrode 513 through the connection hole 591 of theflattening film 59.

Insulating Portion

An insulating portion 60 for partitioning and electrically insulatingthe first light-emitting device 10 from the second light-emitting device20 is formed between the first light-emitting device 10 and the secondlight-emitting device 20 which are adjacent to each other on theflattening film 59. As shown in FIG. 2, the insulating portion 60includes: a first insulating portion 61 formed at a connection portionof the first light-emitting device 10 and the first drive transistor51A; a second insulating portion 62 formed at a connection portion ofthe second light-emitting device 20 and the second drive transistor 51B;a third insulating portion 64 for covering edges of the electrodes; anda fourth insulating portion 65 for preventing electrical connectionbetween the third electrode 16 and the second electrode 14.

The first insulating portion 61 is raised from the substrate 100, sothat a step is formed between the first light-emitting device 10 and thesecond light-emitting device 20. Further, as shown in FIG. 2, the firstinsulating portion 61 has a protrusion 63 that protrudes toward thefirst region in which the first light-emitting device 10 is formed andthe second region in which the second light-emitting device 20 isformed. The step formed by the first insulating portion 61 is in aso-called inverse tapered shape, in other words, in an inverse trapezoidhaving a top larger than a bottom. A height of the protrusion 63 ispreferably higher than a height of an upper edge of the fourth electrode24. This height is for securing disconnection between the secondelectrode 14 and the fourth electrode 24.

As shown in FIG. 2, the second insulating portion 62 is raised from thesubstrate 100, covers the edge of the first electrode 12, and formedover the relay electrode 22 and the auxiliary connector 221. In thefirst exemplary embodiment, the respective ends near the secondlight-emitting device 20 of the first light-emitting unit 13, the secondelectrode 14 and the second light-emitting unit 15 of the firstlight-emitting device 10 overlap on the raised second insulating portion62. The third light-emitting unit 23, fourth electrode 24 and fourthlight-emitting unit 25 of the second light-emitting device 20 do notoverlap on the raised second insulating portion 62. In the firstexemplary embodiment, the step of the second insulating portion 62 isthus formed between the first light-emitting device 10 and the secondlight-emitting device 20. Since the second insulating portion 62 isinterposed between the first electrode 12 and the relay electrode 22 andbetween the first electrode 12 and the auxiliary connector 221, shortcircuit between the first light-emitting device 10 and the secondlight-emitting device 20 is prevented.

Moreover, the second insulating portion 62 also has the protrusion 63that protrudes toward the second region in which the secondlight-emitting device 20 is formed. The step formed by the secondinsulating portion 62 is also in a so-called inverse tapered shape. Aportion of the second insulating portion 62 in the first region in whichthe first light-emitting device 10 is formed is smoothly inclined toform a forward tapered shape and cover the end of the first electrode12.

In the respective inverse tapered steps of the first insulating portion61 and the second insulating portion 62, an angle of each of sidesurfaces of the insulating portions 61 and 62 relative to a surface ofthe substrate 100, namely, an inclined angle of each of the sidesurfaces of the insulating portions is preferably 100 degrees or more.In view of a manufacturing yield, the inclined angle is more preferably170 degrees or less, further preferably 140 degrees or less.

A height from a bottom surface (i.e., a surface of the flattening film59 in the first exemplary embodiment) to a top surface of each of theinsulating portions 61 and 62 (i.e., a height of the step) needs to besufficient at least for disconnection between the second electrode 14and the fourth electrode 24 and is preferably larger than a thickness ofthe fourth electrode 24. The height of the step is preferably 100 nm to500 nm, further preferably 150 nm to 300 nm.

An edge 12E (see FIG. 7) of the first electrode 12 and an edge 22E (seeFIG. 7) of the relay electrode 22 are covered with the third insulatingportion 64. The third insulating portion 64 prevents the films laminatedon the electrodes from being broken.

As shown in FIG. 2, the fourth insulating portion 65 fills a gap at anend of the second electrode 14 near the second light-emitting device 20so that the second electrode 14 is not exposed from the gap. The fourthinsulating portion 65 prevents the end of the second electrode 14 overthe second insulating portion 62 from being electrically connected tothe third electrode 16.

Examples of a material of the insulating portion 60 include: an acrylicresin, polycarbonate resin, polyimide resin, fluorinated polyimideresin, benzoguanamine resin, melamine resin, cyclic polyolefin, novolakresin, polycinnamate vinyl, cyclized rubber, polyvinyl chloride resin,polystyrene, phenol resin, alkyd resin, epoxy resin, polyurethane resin,polyester resin, maleate resin, and polyamide resin.

When the insulating portion 60 is made of an inorganic oxide, preferableexamples of the inorganic oxide include silicon oxide (SiO₂ or SiO_(x)),aluminum oxide (Al₂O₃ or AlO_(x)), titanium oxide (TiO₃ or TiO_(x)),yttrium oxide (Y₂O₃ or YO_(x)), germanium oxide (GeO₂ or GeO_(x)), zincoxide (ZnO), magnesium oxide (MgO), calcium oxide (CaO), boric acid(B₂O₃), strontium oxide (SrO), barium oxide (BaO), lead oxide (PbO),zirconia (ZrO₂), sodium oxide (Na₂O), lithium oxide (Li₂O), andpotassium oxide (K₂O). In the above inorganic oxides, 1≦x≦3.

The insulating portion 60 can be selectively formed at a predeterminedposition on the flattening film 59 by a photolithography process and thelike.

The layers of the first light-emitting unit 13 are formed over the firstregion where the first light-emitting device 10 is formed while thelayers of the third light-emitting unit 23 are formed over the secondregion where the second light-emitting device 20 is formed, on theflattening film 59 where the first electrode 12, relay electrode 22,auxiliary connector 221 and insulating portion 60 are formed. Asdescribed above, since the layers of the first light-emitting unit 13and the layers of the third light-emitting unit 23 are the same and areformed of the same material, the layers are manufactured in the samestep. At this time, the layers of the first light-emitting unit 13 aredisconnected from the layers of the third light-emitting unit 23 by therespective steps of the first insulating portion 61 and the secondinsulating portion 62. Similar to the light-emitting units 13 and 23,the second electrode 14 and the fourth electrode 24 are respectivelyformed of the same material in the same step over the first region andthe second region. The second light-emitting unit 15 and the fourthlight-emitting unit 25 are also respectively formed of the same materialin the same step over the first region and the second region. By theinverse tapered insulating portions 61 and 62, the second electrode 14is disconnected from the fourth electrode 24 while the secondlight-emitting unit 15 is disconnected from the fourth light-emittingunit 25. In this arrangement, the first light-emitting unit 13, secondelectrode 14, and second light-emitting unit 15 are placed over thesecond insulating portion 62 from the first region toward the secondregion. At the end of the second insulating portion 62 where the firstlight-emitting unit 13, second electrode 14, and second light-emittingunit 15 are placed, the first light-emitting unit 13, second electrode14, and second light-emitting unit 15 are respectively disconnected fromthe third light-emitting unit 23, fourth electrode 24 and fourthlight-emitting unit 25 by the inverse tapered step of the secondinsulating portion 62. On the other hand, the respective ends of thethird light-emitting unit 23, fourth electrode 24 and fourthlight-emitting unit 25 extend toward the first region and reach a baseof the step of the second insulating portion 62. In this arrangement,the fourth electrode 24 is connected to the auxiliary connector 221formed on the relay electrode 22. In other words, the fourth electrode24 is connected to the drive drain electrode 513 through the auxiliaryconnector 221 and the relay electrode 22.

It should be noted that the third electrode 16 and the fifth electrode26 are provided by a common electrode and are not disconnected from eachother by the inverse tapered steps of the insulating portions 61 and 62.A film thickness of the common electrode is preferably in a range of 90nm to 150 nm. Further, when the film thickness of the common electrodeis in the above range, the light-emitting apparatus is preferably of abottom emission type in which light emitted from a light-emitting unitis extracted through a transmissive substrate.

In the first exemplary embodiment, as shown in FIG. 1, the insulatingportion 60 is provided in the longitudinal direction to extend over toends of the third electrode 16 and the fifth electrode 26. Moreover, inthe first exemplary embodiment, a leading electrode 27 is provided atthe ends of the third electrode 16 and the fifth electrode 26 to beelectrically connected to the third electrode 16 and the fifth electrode26. The leading electrode 27 is a relay electrode that connects thethird electrode 16 and the fifth electrode 26 to a power source. Theleading electrode 27 is connected to the power source or a ground point.The leading electrode 27 is provided from the cathode in the traversedirection as shown in FIG. 1. Even if the above common electrode isdivided between the third electrode 16 and the fifth electrode 26 by thestep of the insulating portion 60, the third electrode 16 and the fifthelectrode 26 are independently in electrical connection to the leadingelectrode 27. Accordingly, failure to provide electricity to the firstlight-emitting device 10 and the second light-emitting device 20 can beprevented.

In the first exemplary embodiment, the leading electrode 27 is notprovided in the longitudinal direction. This arrangement is made foravoiding concentration of electrical current on a single point when theabove common electrode is divided into the third electrode 16 and thefifth electrode 26.

Protective Layer and Sealing Substrate

A device protective layer and a sealing substrate may be provided tocover the first light-emitting device 10 and the second light-emittingdevice 20. The device protective layer is formed of an insulatingmaterial such as silicon nitride (SiNx), silicon oxide (SiOx) or thelike. The sealing substrate provided on the device protective layerseals the light-emitting devices 10 and 20 in conjunction with thedevice protective layer, an adhesive layer and the like. Whenirradiation light from the light-emitting devices 10 and 20 istransmitted through the device protective layer and the sealingsubstrate, the device protective layer and the sealing substrate arepreferably formed of a light-transmissive material (e.g., glass) similarto the substrate 100.

Color Conversion Portion

A color converter 80 having a color conversion portion is provided on aside of the light-emitting apparatus 1 from which light is extracted.The color converter is exemplified by a color filter.

In the first exemplary embodiment, the light-emitting apparatus 1 is aso-called bottom emission device in which irradiation light from thefirst light-emitting device 10 and the second light-emitting device 20is extracted through the substrate 100. Accordingly, the color converter80 is provided to an opposite surface of the substrate 100 from asurface where the first light-emitting device 10 and the secondlight-emitting device 20 are provided.

FIG. 6 is a schematic view showing a laminated structure of the firstlight-emitting device 10 and the second light-emitting device 20 in thelight-emitting apparatus 1, in which the color converter 80 is providedon the side of the light-emitting apparatus 1 from which light isextracted.

The color converter 80 includes: a first color conversion portion 81that transmits a first color light C1 and blocks a second color lightC2; and a second color conversion portion 82 that transmits the secondcolor light C2. As shown in FIG. 6, by providing the color converter 80,the first color light C1 can be emitted from a portion of the colorconverter 80 corresponding to the first light-emitting device 10 whilethe second color light C2 can be emitted from a portion of the colorconverter 80 corresponding to the second light-emitting device 20.

Manufacturing Method of Light-Emitting Apparatus

Next, a manufacturing method of the light-emitting apparatus 1 accordingto the first exemplary embodiment will be described.

FIGS. 7 to 12 are each a schematic view illustrating a manufacturingprocedure of the light-emitting apparatus 1 and each show a crosssection in the thickness direction of the substrate 100.

Firstly, the device driving circuit 50 (the above device drivingportion) is formed on the substrate 100. Subsequently, the firstelectrode 12, relay electrode 22 and auxiliary connector 221 are formedon the device driving circuit 50. The device driving circuit 50 can beformed according to a known manufacturing method of a TFT substrate. Thefirst electrode 12 and the relay electrode 22 are formed by forming aconductive thin film over the entire flattening film 59 and patterningthe film by the photolithography process. The auxiliary connector 221 isformed by selectively coating, for instance, a conductive paste materialon the relay electrode 22 by a dispenser method or the like, and heatingto calcine the coated material.

Next, as shown in FIG. 8, an ink containing a photosensitive resin iscoated to form a film. Examples of a coating method of the ink include aspin coating, screen printing and a slit coating. The film formed bycoating is prebaked to remove a solvent, thereby forming an insulatingfilm 600.

Next, as shown in FIG. 9, the insulating portion 60 is formed at apredetermined position by patterning the insulating film 600 by thephotolithography process.

The photosensitive resin forming the insulating film 600 is provided bya positive-type photosensitive resin and a negative-type photosensitiveresin. Both types are usable. When the positive-type photosensitiveresin is used, a part of the insulating film 600 other than a part wherethe insulating portion 60 is to be formed is exposed to irradiationlight and developed, so that the unexposed part is left as theinsulating portion 60 in a form of a pattern. In contrast, when thenegative-type photosensitive resin is used, the part of the insulatingfilm 600 where the insulating portion 60 is to be formed is exposed toirradiation light and developed, so that the unexposed part is removedand the exposed part is left as the insulating portion 60 in a form of apattern.

In the first exemplary embodiment, a case where a negative-typephotosensitive resin is used will be described as an example.

A photomask to block light in a predetermined pattern is placed in amanner to face the surface of the substrate 100 on which the insulatingfilm 600 is formed. A part of the insulating film 600 where theinsulating portion 60 is to be formed is exposed to irradiation lightthrough the photomask. In the first exemplary embodiment, an ultravioletcurable resin is used as the photosensitive resin. In the exposure, anultraviolet ray is irradiated to crosslink the photosensitive resin,thereby curing the insulating film 600.

In order to form the inverse tapered insulating portions 61 and 62having the protrusion 63, an exposure amount on the insulating film 600in the thickness direction is adjusted. At this time, the exposureamount is adjusted so that a side of the insulating film 600 facing thephotomask is sufficiently crosslinked and cured. On the other hand, theexposure amount is adjusted so that a side of the insulating film 600near the substrate 100 is crosslinked at a low degree. However, themethod of forming the insulating portions 61 and 62 is not limited tothe above method.

After the exposure, the unexposed part of the insulating film 600 isdeveloped and removed. In the parts where the insulating portions 61 and62 are formed, the side of the insulating film 600 near the substrate100, in which the exposure amount is adjusted to be small, is easy toremove while the side of the insulating film 600 facing the photomask,in which the exposure amount is adjusted to be large, is difficult toremove. In use of such a difference in a removal extent, the inversetapered step is formed. Development is preferably made so that a side ofthe auxiliary connector 221 is exposed toward the second region wherethe second light-emitting device 20 is formed.

A method and a material for peeling the insulating film in thephotolithography process are applicable to the development and areappropriately selected depending on the photosensitive resin to be used.

Next, as shown in FIG. 10, the first light-emitting unit 13 and thethird light-emitting unit 23 are formed in the same step. A material forthe layers of the first light-emitting unit 13 and the layers of thethird light-emitting unit 23 is used to form a film over the first andsecond regions across the insulating portions 61 and 62. The layers ofthe first light-emitting unit 13 are disconnected from the layers of thethird light-emitting unit 23 by the inverse tapered steps of theinsulating portions 61 and 62.

Next, as shown in FIG. 11, the second electrode 14 and the fourthelectrode 24 are formed in the same step. As described above, a materialfor forming the second electrode 14 and the fourth electrode 24 is usedto form a film over the first and second regions across the insulatingportions 61 and 62. The second electrode 14 and the fourth electrode 24are electrically disconnected from each other by the inverse taperedsteps of the insulating portions 61 and 62. The fourth electrode 24 isconnected to an end of the auxiliary connector 221 with a lateralsurface exposed at the base of the insulating portion 62, so that thefourth electrode 24 is electrically connected to the second drivetransistor 51B.

Next, as shown in FIG. 12, the second light-emitting unit 15 and thefourth light-emitting unit 25 are formed in the same step. As describedabove, a material for forming the layers of the second light-emittingunit 15 and the layers of the fourth light-emitting unit 25 is used toform a film over the first and second regions across the insulatingportions 61 and 62. The layers of the second light-emitting unit 15 areelectrically disconnected from the layers of the fourth light-emittingunit 25 by the inverse tapered steps of the insulating portions 6 and62.

Subsequently, the fourth insulating portion 65 is formed. In order toprevent an end of the second electrode 14 near the second light-emittingdevice 20 from being electrically connected to the third electrode 16,the fourth insulating portion 65 is formed to fill a gap of the secondinsulating portion 62. The fourth insulating portion 65 can be formed ofan insulating material by a method (e.g., dispenser coating and inkjetcoating) of selectively forming the fourth insulating portion 65 to fillthe gap.

Subsequently, the third electrode 16 and the fifth electrode 26 as acommon electrode are formed in the same step. The common electrode isformed so as not to be divided by the inverse tapered step of theinsulating portions 61 and 62. The fourth insulating portion 65 formedin advance prevents electrical connection between the second electrode14 and the common electrode.

A vacuum deposition method, sputtering method and the like may beemployed for forming the electrodes. A film forming method including dryfilm-forming such as vacuum deposition, sputtering, plasma or ionplating and wet film-forming such as spin coating, dipping, flow coatingor ink-jet are applicable for forming the light-emitting unit.

Advantages of First Exemplary Embodiment

According to the first exemplary embodiment, the following advantagescan be obtained.

In the light-emitting apparatus 1, a full color display is achievedusing the color converter 80 by outputting the lights from the firstlight-emitting device 10 and the second light-emitting device 20 havingtandem light-emitting units as the respective first and second colorlights.

In the light-emitting apparatus 1, the second drive transistor 51B forthe second light-emitting device 20 is electrically connected to thefourth electrode 24 provided between the third light-emitting unit 23and the fourth light-emitting unit 25.

Accordingly, the light-emitting apparatus 1 can be driven withoutemission of a first color light-emitting layer of the thirdlight-emitting unit 23, so that power consumption can be reduced. In thefirst exemplary embodiment, since the first color light-emitting layerof the light-emitting apparatus 1 is a blue fluorescent emitting layer,power consumption reduction effect of the light-emitting apparatus 1 canbe enhanced as compared to an instance where the blue fluorescentemitting layer of the third light-emitting unit 23 emits light.

Moreover, in the light-emitting apparatus 1, since the insulatingportions 61 and 62 insulate the second electrode 14 from the fourthelectrode 24, short circuit or leakage between both of the electrodescan be reliably prevented, so that emission of the light-emittingdevices 10 and 20 is precisely controllable.

In the light-emitting apparatus 1, the step is formed by the raisedinsulating portions 61 and 62 between the first light-emitting device 10and the second light-emitting device 20. Accordingly, even when thesecond electrode 14 and the fourth electrode 24 are formed in the samestep, the second electrode 14 and the fourth electrode 24 are notcontinuous to each other over the first light-emitting device 10 and thesecond light-emitting device 20. Accordingly, the second electrode 14and the fourth electrode 24 can be electrically disconnected to reliablyprevent short circuit or leakage between both of the electrodes, so thatemission of the light-emitting devices 10 and 20 is preciselycontrollable.

Further, in the light-emitting apparatus 1, the insulating portions 61and 62 each have the protrusion 63 that protrudes toward the firstregion and the second region. The protrusion 63 functions as a shadowmask for electrically disconnecting the second electrode 14 and thefourth electrode 24, so that both of the electrodes can be more reliablyelectrically disconnected. Consequently, short circuit between both ofthe electrodes can be more reliably prevented, so that emission of thelight-emitting devices 10 and 20 is precisely controllable.

Moreover, in the light-emitting apparatus 1, since the auxiliaryconnector 221 is provided on the relay electrode 22 although the edge22E of the relay electrode 22 is covered with the third insulatingportion 64, electrical connection between the fourth electrode 24 andthe drive drain electrode 513 can be reliably secured.

Second Exemplary Embodiment

Next, a second exemplary embodiment of the invention will be describedwith reference to the drawings.

Light-Emitting Apparatus

FIG. 13 is a schematic cross-sectional view in a substrate thicknessdirection showing a light-emitting apparatus 2 according to the secondexemplary embodiment.

In the description of the second exemplary embodiment, the samecomponents as those in the first exemplary embodiment are denoted by thesame reference signs and names to simplify or omit an explanation of thecomponents. In the second exemplary embodiment, the same materials andcompounds as described in the first exemplary embodiment are usable.

The light-emitting apparatus 2 includes the substrate 100, the firstlight-emitting device 10, the second light-emitting device 20 and athird light-emitting device 30. The light-emitting devices 10, 20 and 30are driven by the device driving circuit 50.

In the light-emitting apparatus 2, a pixel 2P (a display unit) isdefined including the first light-emitting device 10, secondlight-emitting device 20 and third light-emitting device 30. Thelight-emitting apparatus 2 includes a plurality of pixels 2P. Theplurality of pixels 2P are arranged in a matrix as a whole to form alight-emitting region.

The third light-emitting device 30 is provided on a third region of thesubstrate 100 where the third light-emitting device is provided. Thethird region is provided between the first region where the firstlight-emitting device 10 is provided and the second region where thesecond light-emitting device 20 is provided. As shown in FIG. 13, thethird light-emitting device 30 includes the fifth light-emitting unit33, sixth electrode 34, sixth light-emitting unit 35 and seventhelectrode 36. In the second exemplary embodiment, the fifthlight-emitting unit 33, sixth electrode 34, sixth light-emitting unit 35and seventh electrode 36 are provided in this order from the substrate100. The third light-emitting device 30 also has a tandem devicestructure in the same manner as in the first exemplary embodiment. Thesame material as in the first exemplary embodiment is usable as amaterial for forming the third light-emitting device 30.

In the second exemplary embodiment, the second light-emitting unit 15,fourth light-emitting unit 25, and sixth light-emitting unit 35 areformed of the same material in the same step. The light-emitting units15, 25 and 35 each include a second color light-emitting layer thatemits a second color light and a third color light-emitting layer thatemits a third color light.

The first light-emitting unit 13, third light-emitting unit 23 and fifthlight-emitting unit 33 are formed of the same material in the same step.The light-emitting units 13, 23 and 33 each include a first colorlight-emitting layer that emits a first color light.

In the second exemplary embodiment, the first color light-emitting layeris a fluorescent emitting layer that emits the first color (blue) light.The second color light-emitting layer is a phosphorescent emitting layerthat emits the second color (red) light. The third color light-emittinglayer is a phosphorescent emitting layer that emits the third color(green) light.

In the second exemplary embodiment, the seventh electrode 36 is a commonelectrode formed of the same material as the third electrode 16 of thefirst light-emitting device 10 and the fifth electrode 26 of the secondlight-emitting device 20 in the same step substantially over the wholelight-emitting region of the light-emitting apparatus 2.

The light-emitting apparatus 2 includes the same device driving circuit50 as in the first exemplary embodiment, in which a third drivetransistor 51C for driving the third light-emitting device 30, theswitching transistor 52 and the capacitor device 53 are provided inevery third light-emitting device 30.

Even in the third light-emitting device 30, a relay electrode 32 and anauxiliary connector 321 for electrically connecting the sixth electrode34 to the drive drain electrode 513 of the third drive transistor 51Care formed between the second region and the third region on theflattening film 59 in the same manner as in the second light-emittingdevice 20. The relay electrode 32 is connected to the drive drainelectrode 513 through the connection hole 591 of the flattening film 59.The relay electrode 32 and the auxiliary connector 321 can be formed ofthe same material by the same method as the relay electrode 22 and theauxiliary connector 221 of the second light-emitting device 20 asdescribed in the first exemplary embodiment.

In the light-emitting apparatus 2, the insulating portion 62 is alsoformed between the second light-emitting device 20 and the thirdlight-emitting device 30. Since the insulating portion 62 is shaped inan inverse tapered step, the electrodes and the light-emitting units inadjacent devices are electrically disconnected as described in the firstexemplary embodiment. An end of the sixth electrode 34 reaches the baseof the inverse tapered insulating portion 62 formed between thelight-emitting devices 20 and 30 to be connected to a side surface ofthe auxiliary connector 321, so that the sixth electrode 34 and thedrive drain electrode 513 are electrically connected.

FIG. 14 is a schematic view showing a laminated arrangement of thelight-emitting devices 10, 20 and 30 in the light-emitting apparatus 2.

As shown in FIG. 14, a color converter 80A is provided to an oppositesurface of the substrate 100 from a surface where the light-emittingdevices 10, 20, 30 and the like are provided.

The color converter 80A includes: a first color conversion portion 81Athat transmits the first color light C1 and blocks the second colorlight C2 and the third color light C3; a second color conversion portion82A that transmits the second color light C2 and blocks the third colorlight C3; and a third color conversion portion 83A that transmits thethird color light C3 and blocks the second color light C2. As shown inFIG. 14, by providing the color converter 80A, the first color light C1(blue) can be displayed on a portion of the color converter 80Acorresponding to the first light-emitting device 10; the second colorlight C2 (red) can be displayed on a portion of the color converter 80Acorresponding to the second light-emitting device 20; and the thirdcolor light C3 (green) can be displayed on a portion of the colorconverter 80A corresponding to the third light-emitting device 30. Inshort, a full color display in RGB becomes possible.

Advantages of Second Exemplary Embodiment

According to the second exemplary embodiment, the following advantagescan be obtained in addition to the advantages of the first exemplaryembodiment.

In the light-emitting apparatus 2, the light-emitting devices 10, 20 and30 are provided on the substrate 100. The second drive transistor 51B ofthe second light-emitting device 20 is electrically connected to thefourth electrode 24 (relay electrode). The third drive transistor 51C ofthe third light-emitting device 30 is electrically connected to thesixth electrode 34 (relay electrode). Accordingly, with thelight-emitting apparatus 2, the third light-emitting unit 23 of thesecond light-emitting device 20 and the fifth light-emitting unit 33 ofthe third light-emitting device 30 can be driven without emission of therespective first color light-emitting layers of the third light-emittingunit 23 and the fifth light-emitting unit 33. Although thelight-emitting apparatus 2 includes the plurality of pixels 2P fordisplaying RGB colors from the corresponding portions of thelight-emitting devices 10, 20 and 30, power consumption can be reduced.

Third Exemplary Embodiment

Next, a third exemplary embodiment of the invention will be describedwith reference to the drawings.

Light-Emitting Apparatus

FIG. 15 is a schematic cross-sectional view in a substrate thicknessdirection showing a light-emitting apparatus 3 according to the thirdexemplary embodiment.

In the description of the third exemplary embodiment, the samecomponents as those in the above exemplary embodiments are denoted bythe same reference signs and names to simplify or omit an explanation ofthe components. In the third exemplary embodiment, the same materialsand compounds as described in the above exemplary embodiments areusable.

The light-emitting apparatus 3 is different from the light-emittingapparatus 1 in the arrangement of the second light-emitting device 20.

A second light-emitting device 20A of the light-emitting apparatus 3 isprovided in the second region of the substrate 100 and adjacent to thefirst light-emitting device 10 provided in the first region. The secondlight-emitting device 20A includes an eighth electrode 28, the fourthelectrode 24, the fourth light-emitting unit 25 and the fifth electrode26. In the third exemplary embodiment, the eighth electrode 28, fourthelectrode 24, fourth light-emitting unit 25 and fifth electrode 26 areprovided in this order from the substrate 100.

Unlike in the first light-emitting device 10, the fourth electrode 24 islaminated on the eighth electrode 28 to be electrically connected in thesecond light-emitting device 20A. The second light-emitting device 20Aas an organic EL device includes the eighth electrode 28, the fifthelectrode 26, and the fourth light-emitting unit 25 interposed betweenthe fifth electrode 26 and the eighth electrode 28. In the secondlight-emitting device 20A, the eighth electrode 28 corresponds to theanode while the fifth electrode 26 corresponds to the cathode.

As described above, the fifth electrode 26 is a common electrode withthe third electrode 16 of the first light-emitting device 10 and isformed in the same procedure substantially over the whole light-emittingregion of the light-emitting apparatus 1.

Light-Emitting Unit

In the third exemplary embodiment, the fourth light-emitting unit 25forms a planar light-emitting region.

In the third exemplary embodiment, no third light-emitting unit 23 isprovided unlike in the first exemplary embodiment. Accordingly,electrical charges are injected from the fourth electrode 24 connectedto the eighth electrode 28 and the fifth electrode 26 into the fourthlight-emitting unit 25. The injected electrical charges are recombined,whereby the fourth light-emitting unit 25 emits light. The thirdlight-emitting unit 23 may be formed as a common light-emitting unitwith the first light-emitting unit 13 in the second region when thefirst light-emitting unit 13 is formed. It is only required tosubsequently remove the formed third light-emitting unit 23. The thirdlight-emitting unit 23 is removed by laser irradiation and the like.Even when an organic layer of the third light-emitting unit remains in apart of the second region, as long as a partial electrical connectionbetween the eighth electrode 28 and the fourth electrode 24 is secured,electrical charges are injected from the fourth electrode 24 into thefourth light-emitting unit 25, leading to a stable emission. A referencenumeral 67 in FIG. 15 denotes a remaining film of the thirdlight-emitting unit 23 after removal by laser irradiation and the like.

Connection between Light-Emitting Device and Device Driving Circuit

The first electrode 12 is formed substantially over the entire surfaceof the first region on which the first light-emitting device 10 isformed on the flattening film 59. The eighth electrode 28 is formedsubstantially over the entire surface of the second region on which thesecond light-emitting device 20A is formed on the flattening film 59.

Insulating Portion

The insulating portion 60 for partitioning and electrically insulatingthe first light-emitting device 10 from the second light-emitting device20A is formed between the first light-emitting device 10 and the secondlight-emitting device 20A which are adjacent to each other on theflattening film 59. The insulating portion 60 is provided by the firstinsulating portion 61 described in the first exemplary embodiment.

The first insulating portion 61 is raised from the substrate 100, sothat a step is formed between the first light-emitting device 10 and thesecond light-emitting device 20A. Further, the first insulating portion61 has the protrusion 63 that protrudes toward the first region on whichthe first light-emitting device 10 is formed and the second region inwhich the second light-emitting device 20A is formed. The step formed bythe first insulating portion 61 is in an inverse tapered shape asdescribed above. The layers of the first light-emitting device 10 andthe layers of the second light-emitting device 20A reach under theprotrusion 63.

The layers of the first light-emitting device 10 are formed over thefirst region where the first light-emitting device 10 is formed whilethe layers of the second light-emitting device 20A are formed over thesecond region where the second light-emitting device 20A is formed, onthe flattening film 59 where the first electrode 12, eighth electrode 28and insulating portion 60 are formed. As described above, the secondelectrode 14 and the fourth electrode 24 are respectively formed of thesame material in the same step over the first region and the secondregion. The second light-emitting unit 15 and the fourth light-emittingunit 25 are also respectively formed of the same material in the samestep over the first region and the second region. However, the secondelectrode 14 is disconnected from the fourth electrode 24 by the inversetapered step of the first insulating portion 61, so that the secondlight-emitting unit 15 is disconnected from the fourth light-emittingunit 25.

In the light-emitting apparatus 3, the eighth electrode 28 is alsoprovided in the connection hole 591 and further electrically connectedto a part of the drive drain electrode 513 on the upper surface of theinterlayer insulating film 58.

The arrangements of the other components in the light-emitting apparatus3 are the same as in the above exemplary embodiments.

Advantages of Third Exemplary Embodiment

The light-emitting apparatus 3 can be driven without an unnecessaryemission of the light-emitting layer since having no thirdlight-emitting unit 23 unlike in the light-emitting apparatus 1 of thefirst exemplary embodiment, so that power consumption can be reduced.

According to the third embodiment, the same advantages as in the firstexemplary embodiment can be obtained.

Fourth Exemplary Embodiment

Next, a fourth exemplary embodiment of the invention will be describedwith reference to the drawings.

Light-Emitting Apparatus

FIG. 16 is a schematic cross-sectional view in a substrate thicknessdirection showing a light-emitting apparatus 4 according to the fourthexemplary embodiment.

In the description of the fourth exemplary embodiment, the samecomponents as those in the above exemplary embodiments are denoted bythe same reference signs and names to simplify or omit an explanation ofthe components. In the fourth exemplary embodiment, the same materialsand compounds as described in the above exemplary embodiments areusable.

The light-emitting apparatus 4 is different from the light-emittingapparatus 3 in the arrangement of the insulating portion.

In the light-emitting apparatus 4, the insulating portion providedbetween the first light-emitting device 10 and the second light-emittingdevice 20A forming each pixel is a fifth insulating portion 66 thatcovers the respective edges of the first electrode 12 and the eighthelectrode 28. The fifth insulating portion 66 is not in an inversetapered shape unlike the first insulating portion 61 and the secondinsulating portion 62 in the above exemplary embodiments. Accordingly,in the light-emitting apparatus 4, the layers forming the firstlight-emitting device 10 and the second light-emitting device 20, 20Aare not divided, so that the second electrode 14 is continuous to thefourth electrode 24 while the second light-emitting unit 15 iscontinuous to the fourth light-emitting unit 25. It should be noted thatthe first light-emitting unit 13 is provided in the first region wherethe first light-emitting device 10 is formed, but is not provided in thesecond region where the second light-emitting device 20A is formed.

The arrangements of the other components in the light-emitting apparatus4 are the same as in the above exemplary embodiments.

Advantages of Fourth Exemplary Embodiment

In the light-emitting apparatus 4, when the electric conductivity of thesecond electrode 14 and the fourth electrode 24 (which correspond to theintermediate layer) is in a range of 10⁻¹⁰ S/cm to 10⁻² S/cm, leakage ofelectric current to an adjacent pixel does not occur. Accordingly,emission of each pixel is independently controllable without dividingthe respective intermediate layers of the light-emitting devices byforming the step with the inverse tapered second insulating portion 62and the like as in the first exemplary embodiment.

Fifth Exemplary Embodiment

Next, a fifth exemplary embodiment of the invention will be describedwith reference to the drawings.

Light-Emitting Apparatus

FIG. 17 is a plan view showing a light-emitting apparatus 5 according tothe fifth exemplary embodiment.

In the description of the fifth exemplary embodiment, the samecomponents as those in the above exemplary embodiments are denoted bythe same reference signs and names to simplify or omit an explanation ofthe components. In the fifth exemplary embodiment, the same materialsand compounds as described in the above exemplary embodiments areusable.

The light-emitting apparatus 5 is different from the light-emittingapparatus 1 in a shape of the insulating portion. While the insulatingportion 60 is continuously provided in the longitudinal direction asshown in FIG. 1, the insulating portion 60 is spaced from each other atevery predetermined distance in the longitudinal direction between thefirst light-emitting device 10 and the second light-emitting device 20in the light-emitting apparatus 5 as shown in FIG. 17. FIG. 18 is aschematic cross-sectional view in the substrate thickness directionshowing the light-emitting apparatus 5 and shows a cross sectional viewtaken along A-A′ line of FIG. 17 in a direction of arrows. As shown inFIG. 18, in the portion shown in the cross sectional view of FIG. 17, noinsulating portion 60 is provided between the region where the firstlight-emitting device 10 is provided and the region where the secondlight-emitting device 20 is provided. Accordingly, the layers of thefirst light-emitting device 10 are not disconnected from the layers ofthe second light-emitting device 20.

FIG. 19 is a schematic cross-sectional view in the substrate thicknessdirection showing the light-emitting apparatus 5 and shows a crosssectional view taken along B-B′ line of FIG. 17 in a direction ofarrows. As shown in FIG. 19, the insulating portion 60 is not continuousbetween the first light-emitting devices 10.

In the light-emitting apparatus 5, the insulating portion 60 is thusprovided in the region where the first light-emitting device 10 isadjacent to the second light-emitting device 20 whereas no insulatingportion 60 is provided in other regions. With this arrangement, theinverse tapered first insulating portion 61 and the step of the secondinsulating portion 62 are not formed in the region where no insulatingportion 60 is formed. As a result, the third electrode 16 and the fifthelectrode 26 in a form of the above-described common electrode areunlikely to be divided, so that electrical connection is likely to occurover the entire light-emitting region in the light-emitting apparatus 5.

In the light-emitting apparatus 5, the leading electrode 27 is providedat ends of the third electrode 16 and the fifth electrode 26 in thelongitudinal and traverse directions of the light-emitting apparatus 5to be connected to the third electrode 16 and the fifth electrode 26.The leading electrode 27 is provided in the longitudinal and traversedirections as shown in FIG. 17. Since the insulating portion 60 isprovided at every predetermined distance in the longitudinal directionof the light-emitting apparatus 5, electrical connection is also likelyto occur over the entire light-emitting region using the leadingelectrode 27 provided at the traverse ends of the light-emittingapparatus 5.

The arrangements of the other components in the light-emitting apparatus5 are the same as in the above exemplary embodiments.

According to the fifth exemplary embodiment, the same advantages as inthe first exemplary embodiment can be obtained.

Modifications of Embodiment(s)

The scope of the invention is not limited to the above-describedexemplary embodiments but also includes modification(s) andimprovement(s) as long as an object of the invention can be achieved.

In the above exemplary embodiments, the arrangement of the invention inwhich the auxiliary connector is formed on the relay electrode andconnected to the fourth electrode (intermediate electrode) is describedas an example. However, the arrangement of the invention is not limitedthereto. Specifically, the auxiliary connector is not requisite. It isonly required to secure connection between the fourth electrode and therelay electrode, thereby securing electrical connection between thesecond drive transistor and the fourth electrode.

A pixel electrode may be formed on a side of the third light-emittingunit near the substrate in the second light-emitting device in the samestep as formation of the first electrode. In other words, the thirdlight-emitting unit may be held between the fourth electrode(intermediate electrode) and the pixel electrode. However, even in thisarrangement, the pixel electrode and the second drive transistor are notelectrically connected, but the fourth electrode and the second drivetransistor are electrically connected.

The arrangement of the invention is not limited to the arrangementdescribed in the above exemplary embodiments, but one of the flatteningfilm and the interlayer insulating film may be omitted.

In the first exemplary embodiment, the arrangement of the invention inwhich the second light-emitting unit and the fourth light-emitting unithave the respective light-emitting layers that emit the second colorlight (yellow) is described as an example. However, each of the secondlight-emitting unit and the fourth light-emitting unit may have thelight-emitting layer that emits red light and the light-emitting layerthat emits green light. In this arrangement, mixed red and green lightmay be regarded as the second color light. In this arrangement, thecolor conversion portions in a form of three color filters in RGB colorsare respectively provided to the first light-emitting device and the twosecond light-emitting devices, so that three colors in RGB can beobtained.

In the above exemplary embodiments, the arrangement of the invention inwhich the first light-emitting device, the second light-emitting deviceand the like are formed on the substrate is described as an example.However, the arrangement of the invention is not limited thereto. Forinstance, after the first light-emitting device and the secondlight-emitting device are formed on the substrate, the firstlight-emitting device and the second light-emitting device may be peeledand repositioned on another support. The support is exemplified by aflexible substrate.

In the above exemplary embodiments, the arrangement of the invention inwhich the first light-emitting unit emits light in mixed color of thefirst color light and the second color light is described as an example.However, the arrangement of the invention is not limited thereto. Forinstance, the first light-emitting unit may emit the first color lightin the first light-emitting device while the second light-emitting unitmay emit the second color light in the second light-emitting device.Thus, in the first light-emitting device and the second light-emittingdevice respectively having the light-emitting layers capable of emittingthe first color light and the second color light, the respectivelight-emitting layers to emit light in the first light-emitting deviceand the second light-emitting device can be selected, so that powerconsumption can be further reduced.

EXPLANATION OF CODES

-   1, 2 . . . light-emitting apparatus-   10 . . . first light-emitting device-   100 . . . substrate-   12 . . . first electrode-   13 . . . first light-emitting unit-   14 . . . second electrode-   15 . . . second light-emitting unit-   16 . . . third electrode-   20 . . . second light-emitting device-   23 . . . third light-emitting unit-   24 . . . fourth electrode-   25 . . . fourth light-emitting unit-   26 . . . fifth electrode-   30 . . . third light-emitting device-   32 . . . relay electrode-   33 . . . fifth light-emitting unit-   34 . . . sixth electrode-   35 . . . sixth light-emitting unit-   36 . . . seventh electrode-   50 . . . device driving circuit (device driving portion)-   51 . . . drive transistor-   51A . . . first drive transistor-   51B . . . second drive transistor-   51C . . . third drive transistor-   60 . . . insulating portion-   63 . . . protrusion-   80, 80A . . . color converter-   C1 . . . first color light-   C2 . . . second color light-   C3 . . . third color light

1. A light-emitting apparatus comprising: a first light-emitting devicethat comprises a first light-emitting unit, a second light-emittingunit, and a first intermediate layer interposed between the firstlight-emitting unit and the second light-emitting unit, the firstlight-emitting unit, the second light-emitting unit and the firstintermediate layer being laminated to each other; a secondlight-emitting device that comprises a third light-emitting unit that isformed in the same step as the first light-emitting unit, a fourthlight-emitting unit that is formed in the same step as the secondlight-emitting unit, and a second intermediate layer that is formed inthe same step as the first intermediate layer, the third light-emittingunit, the fourth light-emitting unit and the second intermediate layerbeing laminated to each other; and a device driving portion thatcomprises a first drive transistor for driving the first light-emittingdevice and a second drive transistor for driving the secondlight-emitting device, wherein the first light-emitting unit and thethird light-emitting unit each have a first color light-emitting layerthat emits a first color light, the second light-emitting unit and thefourth light-emitting unit each have a second color light-emitting layerthat emits a second color light, the first drive transistor drives thefirst light-emitting unit to make the first light-emitting device emitthe first color light or drives the second light-emitting unit to makethe first light-emitting device emit the second color light, and thesecond drive transistor drives the third light-emitting unit or thefourth light-emitting unit to make the second light-emitting device emita color light different from the color light emitted from the firstlight-emitting device.
 2. A light-emitting apparatus comprising: a firstlight-emitting device that comprises a first light-emitting unit, asecond light-emitting unit, and a first intermediate layer interposedbetween the first light-emitting unit and the second light-emittingunit, the first light-emitting unit, the second light-emitting unit andthe first intermediate layer being laminated to each other; a secondlight-emitting device that comprises a third light-emitting unit that isformed in the same step as the first light-emitting unit, a fourthlight-emitting unit that is formed in the same step as the secondlight-emitting unit, and a second intermediate layer that is formed tohave the same arrangement as the first intermediate layer, the thirdlight-emitting unit, the fourth light-emitting unit and the secondintermediate layer being laminated to each other; and a device drivingportion that comprises a first drive transistor for driving the firstlight-emitting device and a second drive transistor for driving thesecond light-emitting device, wherein the first light-emitting unit andthe third light-emitting unit each have a first color light-emittinglayer that emits a first color light, the second light-emitting unit andthe fourth light-emitting unit each have a second color light-emittinglayer that emits a second color light, the first drive transistor drivesthe first light-emitting unit and the second light-emitting unit to makethe first light-emitting device emit the first color light and thesecond color light, and the second drive transistor drives the thirdlight-emitting unit to make the second light-emitting device emit thefirst color light or drives the fourth light-emitting unit to make thesecond light-emitting device emit the second color light.
 3. Alight-emitting apparatus comprising: a first light-emitting device thatcomprises a first light-emitting unit, a second light-emitting unit, anda first intermediate layer interposed between the first light-emittingunit and the second light-emitting unit, the first light-emitting unit,the second light-emitting unit and the first intermediate layer beinglaminated to each other; a second light-emitting device that comprises athird light-emitting unit that is formed to have the same arrangement asthe first light-emitting unit, a fourth light-emitting unit that isformed to have the same arrangement as the second light-emitting unit,and a second intermediate layer that is interposed between the thirdlight-emitting unit and the fourth light-emitting unit and is formed tohave the same arrangement as the first intermediate layer, the thirdlight-emitting unit, the fourth light-emitting unit and the secondintermediate layer being laminated to each other; and a device drivingportion that comprises a first drive transistor for driving the firstlight-emitting device and a second drive transistor for driving thesecond light-emitting device, wherein the first light-emitting unit andthe third light-emitting unit each have a first color light-emittinglayer that emits a first color light, the second light-emitting unit andthe fourth light-emitting unit each have a second color light-emittinglayer that emits a second color light, the first drive transistor drivesthe first light-emitting unit to make the first light-emitting deviceemit the first color light or drives the second light-emitting unit tomake the first light-emitting device emit the second color light, andthe second drive transistor drives the third light-emitting unit or thefourth light-emitting unit to make the second light-emitting device emita color light different from the color light emitted from the firstlight-emitting device.
 4. A light-emitting apparatus comprising: a firstlight-emitting device that comprises a first light-emitting unit, asecond light-emitting unit, and a first intermediate layer interposedbetween the first light-emitting unit and the second light-emittingunit, the first light-emitting unit, the second light-emitting unit andthe first intermediate layer being laminated to each other; a secondlight-emitting device that comprises a third light-emitting unit that isformed to have the same arrangement as the first light-emitting unit, afourth light-emitting unit that is formed to have the same arrangementas the second light-emitting unit, and a second intermediate layer thatis interposed between the third light-emitting unit and the fourthlight-emitting unit and is formed to have the same arrangement as thefirst intermediate layer, the third light-emitting unit, the fourthlight-emitting unit and the second intermediate layer being laminated toeach other; and a device driving portion that comprises a first drivetransistor for driving the first light-emitting device and a seconddrive transistor for driving the second light-emitting device, whereinthe first light-emitting unit and the third light-emitting unit eachhave a first color light-emitting layer that emits a first color light,the second light-emitting unit and the fourth light-emitting unit eachhave a second color light-emitting layer that emits a second colorlight, the first drive transistor drives the first light-emitting unitand the second light-emitting unit to make the first light-emittingdevice emit the first color light and the second color light, and thesecond drive transistor drives the third light-emitting unit to make thesecond light-emitting device emit the first color light or drives thefourth light-emitting unit to make the second light-emitting device emitthe second color light.
 5. A light-emitting apparatus comprising: afirst light-emitting device; a second light-emitting device; and adevice driving portion that comprises a first drive transistor fordriving the first light-emitting device and a second drive transistorfor driving the second light-emitting device, wherein the firstlight-emitting device comprises a first electrode, a firstlight-emitting unit, a second electrode, a second light-emitting unit,and a third electrode in this order, the second light-emitting devicecomprises a third light-emitting unit, a fourth electrode, a fourthlight-emitting unit, and a fifth electrode in this order, the firstlight-emitting unit and the third light-emitting unit are formed in thesame step and each have a first color light-emitting layer that emits afirst color light, the second electrode and the fourth electrode areformed in the same step, the second light-emitting unit and the fourthlight-emitting unit are formed in the same step and each have a secondcolor light-emitting layer that emits a second color light, the firstdrive transistor is electrically connected to the first electrode, andthe second drive transistor is electrically connected to the fourthelectrode.
 6. A light-emitting apparatus comprising: a firstlight-emitting device; a second light-emitting device; and a devicedriving portion that comprises a first drive transistor for driving thefirst light-emitting device and a second drive transistor for drivingthe second light-emitting device, wherein the first light-emittingdevice comprises a first electrode, a first light-emitting unit, asecond electrode, a second light-emitting unit, and a third electrode inthis order, the second light-emitting device comprises an eighthelectrode, a fourth electrode, a fourth light-emitting unit, and a fifthelectrode in this order, the second electrode and the fourth electrodeare formed in the same step, the first light-emitting unit has a firstcolor light-emitting layer that emits a first color light, the secondlight-emitting unit and the fourth light-emitting unit are formed in thesame step and each have a second color light-emitting layer that emits asecond color light, the first drive transistor is electrically connectedto the first electrode, and the second drive transistor is electricallyconnected to the eighth electrode.
 7. The light-emitting apparatusaccording to claim 5, further comprising: an insulating portion thatelectrically insulates the second electrode from the fourth electrode.8. The light-emitting apparatus according to claim 7, wherein theinsulating portion is raised from the first electrode toward the thirdelectrode, and an end of the second electrode near the secondlight-emitting device overlaps on the raised insulating portion toelectrically disconnect the second electrode from the fourth electrode.9. The light-emitting apparatus according to claim 8, wherein theinsulating portion has a protrusion that protrudes toward the secondlight-emitting device.
 10. The light-emitting apparatus according toclaim 1, wherein the first color light-emitting layer of each of thefirst light-emitting unit and the third light-emitting unit is a bluefluorescent emitting layer.
 11. The light-emitting apparatus accordingto claim 1, further comprising: a color conversion portion that isprovided on a side of the first light-emitting device from which lightis extracted and that transmits the first color light and blocks thesecond color light.
 12. A light-emitting apparatus comprising: a firstlight-emitting device; a second light-emitting device; a thirdlight-emitting device; and a device driving portion that comprises afirst drive transistor for driving the first light-emitting device, asecond drive transistor for driving the second light-emitting device,and a third drive transistor for driving the third light-emittingdevice, wherein the first light-emitting device comprises a firstelectrode, a first light-emitting unit, a second electrode, a secondlight-emitting unit, and a third electrode in this order, the secondlight-emitting device comprises a third light-emitting unit, a fourthelectrode, a fourth light-emitting unit, and a fifth electrode in thisorder, the third light-emitting device comprises a fifth light-emittingunit, a sixth electrode, a sixth light-emitting unit, and a seventhelectrode in this order, the first light-emitting unit, the thirdlight-emitting unit and the fifth light-emitting unit are formed in thesame step and each have a first color light-emitting layer that emits afirst color light, the second electrode, the fourth electrode and theseventh electrode are formed in the same step, the second light-emittingunit, the fourth light-emitting unit and the sixth light-emitting unitare formed in the same step and each have a second color light-emittinglayer that emits a second color light, the first drive transistor iselectrically connected to the first electrode, the second drivetransistor is electrically connected to the fourth electrode, and thethird drive transistor is electrically connected to the sixth electrode.13. A light-emitting apparatus comprising: a first light-emittingdevice; a second light-emitting device; and a device driving portionthat comprises a first drive transistor for driving the firstlight-emitting device and a second drive transistor for driving thesecond light-emitting device, wherein the first light-emitting deviceand the second light-emitting device each have an intermediateelectrode, the intermediate electrode is electrically divided by aninsulating portion between the first light-emitting device and thesecond light-emitting device into a second electrode and a fourthelectrode, the first light-emitting device comprises a first electrode,a first light-emitting unit, a second electrode, a second light-emittingunit, and a third electrode in this order, the second light-emittingdevice comprises a third light-emitting unit, a fourth electrode, afourth light-emitting unit, and a fifth electrode in this order, thefirst light-emitting unit and the third light-emitting unit each have afirst color light-emitting layer that emits a first color light, thesecond light-emitting unit and the fourth light-emitting unit each havea second color light-emitting layer that emits a second color light, thefirst drive transistor is electrically connected to the secondelectrode, and the second drive transistor is electrically connected tothe fourth electrode.
 14. A light-emitting apparatus comprising: a firstlight-emitting device; a second light-emitting device; and a devicedriving portion that comprises a first drive transistor for driving thefirst light-emitting device and a second drive transistor for drivingthe second light-emitting device, wherein the first light-emittingdevice comprises: a first electrode, a first light-emitting unit, asecond electrode, a second light-emitting unit, and a third electrode inthis order, the second light-emitting device comprises: a thirdlight-emitting unit, a fourth electrode, a fourth light-emitting unit,and a fifth electrode in this order, the first light-emitting unit andthe third light-emitting unit are formed in the same step and each havea first color light-emitting layer that emits a first color light, thesecond electrode and the fourth electrode are formed in the same step,the second light-emitting unit and the fourth light-emitting unit areformed in the same step and each have a second color light-emittinglayer that emits a second color light, the first drive transistor iselectrically connected to the first electrode, and the second drivetransistor is electrically connected to the fourth electrode to avoid apotential difference between ends in a thickness direction of the thirdlight-emitting unit.
 15. Electronic equipment comprising: thelight-emitting apparatus according to claim
 1. 16. A method ofmanufacturing a light-emitting apparatus comprising a substrate, a firstlight-emitting device provided on the substrate, a second light-emittingdevice provided in a region of the substrate different from a region ofthe substrate where the first light-emitting device is provided, themethod comprising: forming on the substrate a first drive transistor fordriving the first light-emitting device and a second drive transistorfor driving the second light-emitting device; forming a first electrodein a first region of the substrate where the first light-emitting deviceis formed to electrically connect the first electrode to the first drivetransistor; forming an insulating portion, which is raised from thesubstrate and having a protrusion that protrudes toward a second regionwhere the second light-emitting device is formed, at a position fordividing the first region and the second region; forming a first colorlight-emitting unit comprising a first color light-emitting layer thatemits a first color light, across the insulating portion over the firstand second regions; forming an intermediate electrode across theinsulating portion over the first region and the second region toelectrically connect the intermediate electrode in the second region tothe second drive transistor; and forming a second color light-emittingunit comprising a second color light-emitting layer that emits a secondcolor light, across the insulating portion over the first and secondregions.